研究目的
Demonstrating transparent electrical conductors over SiN waveguides using metallic carbon nanotubes (CNTs) to achieve negligible change in transmission till a current density of 35 μA/μm.
研究成果
Metallic CNTs have been demonstrated as transparent electrical conductors over SiN waveguides, showing negligible optical absorption at 2% coverage and no significant degradation in transmission till a current density of 35 μA/μm. The DC resistance of 40 kΩ and flat band of S11 till 10 GHz are promising for the implementation of electrical circuits in SiN-photonic platforms.
研究不足
The study is limited by the coverage percentage of CNTs over the SiN MRR, with optimal performance observed at 2% coverage. Higher coverage leads to increased optical absorption. The resistance of the CNT interconnects could be further reduced by annealing.
1：Experimental Design and Method Selection:
The study involves the fabrication of devices using metallic CNTs over SiN waveguides to demonstrate transparent electrical conductors.
2：Sample Selection and Data Sources:
SiN micro-ring resonators (MRRs) with a diameter of 200 μm and a coupling gap of 200 nm are used.
3：List of Experimental Equipment and Materials:
Electron-beam lithography and reactive-ion etching for fabrication, fiber-to-chip grating coupling for optical characterization, and DC/RF probes for electrical characterization.
4：Experimental Procedures and Operational Workflow:
Fabrication of waveguides on a silicon substrate with a silicon dioxide buffer layer, placement of CNTs using a self-assembly process, and characterization of optical and electrical properties.
5：Data Analysis Methods:
Measurement of current-voltage characteristics and S-parameters to evaluate the performance of the CNT interconnects.
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