研究目的
Investigating the performance and theory of a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs) for THz frequency applications.
研究成果
The GSSD bridge rectifier demonstrates high responsivity and low noise equivalent power, making it suitable for THz detection. The study confirms the quadratic dependence of output voltage on input current and highlights the potential for scalable manufacturing using CVD graphene.
研究不足
The study notes that further design improvements are needed to reduce device resistance and capacitance to push operation further into the THz region. The use of CVD graphene, while scalable, may introduce variability in device performance.
1：Experimental Design and Method Selection:
The study involves the fabrication and measurement of GSSD bridge rectifiers using both exfoliated graphene encapsulated in hBN and CVD graphene on SiO2 substrates. Theoretical models are derived to predict the voltage output based on input current.
2：Sample Selection and Data Sources:
Samples include GSSD bridge rectifiers fabricated from exfoliated graphene encapsulated in hBN and CVD graphene on SiO2 substrates.
3：List of Experimental Equipment and Materials:
Equipment includes a Signal Recovery 7265 lock-in amplifier, Keithley 6487 source/measure unit, and a cryostat system. Materials include graphene, hBN, Si/SiO2 substrates, Cr/Au for contacts.
4：Experimental Procedures and Operational Workflow:
Devices were patterned using electron-beam lithography (EBL), etched by reactive ion etching (RIE), and contacts were deposited using electron beam evaporation. Measurements were performed in vacuum.
5：Data Analysis Methods:
The output voltage and responsivity were measured as functions of input current and gate bias, with data analyzed to confirm theoretical predictions.
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