研究目的
Investigating the combination of band-edge slow light structures with periodic p-n junctions to reduce energy dissipation in Mach-Zehnder modulators for silicon photonics applications.
研究成果
The combination of band-edge slow light structures with interlaced p-n junctions significantly improves modulation efficiency and reduces energy dissipation in Mach-Zehnder modulators, offering a promising approach for silicon photonics applications.
研究不足
The study focuses on theoretical and simulation-based analysis; practical implementation challenges and fabrication tolerances are not extensively discussed.
1：Experimental Design and Method Selection:
The study combines band-edge slow light structures with periodic p-n junctions to enhance modulation efficiency.
2：Sample Selection and Data Sources:
Utilizes silicon grating waveguides and periodic p-n junctions.
3：List of Experimental Equipment and Materials:
Silicon grating waveguides, p-n junctions, SiO2 embedding.
4：Experimental Procedures and Operational Workflow:
Analysis of modulation efficiency and energy dissipation under reverse bias.
5：Data Analysis Methods:
Comparison of modulation efficiency between conventional and slow-light phase shifters.
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