研究目的
Investigating the annealing effects on the structural and electrical properties of BaPbO3 (BPO) thin films prepared by pulsed laser deposition technique.
研究成果
The structural and electrical properties of BPO thin films are significantly affected by annealing temperature and oxygen ambient. Annealing increases resistivity and band gap, and decreases carrier concentration, with the films tending towards insulating nature at higher annealing temperatures.
研究不足
The study is limited to the effects of annealing on BPO thin films under specific conditions (temperature and oxygen ambient). The influence of other parameters or substrates is not explored.
1：Experimental Design and Method Selection:
BPO ceramic targets for PLD were fabricated by conventional solid state reaction method. The films were prepared on fused silica substrates at 6000C and at
2：1mbar oxygen partial pressure. Sample Selection and Data Sources:
Stoichiometric BaCO3 and PbO were used for target preparation.
3：List of Experimental Equipment and Materials:
Nd:YAG laser (Spectra Physics INC GCR 150), Panalytical X(cid:2)Pert Pro HRXRD, Veeco stylus profiler, Ecopia Hall measurement setup (HMS 3000), Jasco 570 UV Spectrophotometer, Atomic force microscope (AFM) (Agilent Technologies, 5500).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Films were deposited, dwelled for 30 minutes, cooled to 600C, and post annealed under excess oxygen at 4000C, 5000C, and 6000C.
5：0C. Data Analysis Methods:
5. Data Analysis Methods: XRD analysis, Hall measurements, optical properties measurement, AFM analysis.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
