摘要： Two-dimensional transition metal dichalcogenides (2D-TMDCs) such as molybdenum disulphide (2D-MoS2) and tungsten disulphide (2D-WS2) are now established as a class of nanomaterials that can be used in numerous applications due to their tuneable physical and chemical properties [1]. However, in terms of electrical characteristics and photoluminescence efficiency, WS2 typically exhibits superior performance compared with the molybdenum analogue [2,3]. Nevertheless, synthesis of continuous, uniform and thickness controllable 2D-WS2 films for (opto)electronic device fabrication is more challenging compared with better established 2D-MoS2 growth protocols. Therefore, the search for alternative precursors and synthesis approaches of 2D-WS2 that can provide mass production with excellent quality at low cost is highly desirable [1]. In this work, we tackle this issue by refining the solvents recipe with n-methylpyrrolidone, n-butylamine and 2-aminoethanol, which significantly improves the continuity, uniformity and thickness controllability for the spin-coated precursor films. This enables the large-area growth of few-layer WS2 films using thermal decomposition via two-step high temperature annealing without sulphurisation. The few-layer WS2 films were characterised by optical and atomic force microscopy to confirm the continuity and two-dimensional nature of the deposited WS2 films. Raman, photoluminescence and x-ray photoelectron spectroscopy indicate growth of highly crystalline films with an optimum composition of WS2. The electrical response of the WS2 films grown by this method was investigated by interrogating a back-gate thin film transistor utilising a WS2 channel as shown in Figure 1.