研究目的
Comparison of ranges for Al implantations into 4H-SiC (0001) using channeled ions and an ion energy in the Bethe-Bloch region to minimize the repeat count of epitaxial growth/ion implantation steps in the fabrication of 4H-SiC superjunction power devices.
研究成果
IIBB was concluded to be more suitable than CII to minimize the repeat count of epitaxial growth/Al-ion implantation steps used in the fabrication of high-voltage 4H-SiC SJ power devices due to its larger projected range.
研究不足
The study is limited to Al implantations into 4H-SiC (0001) and does not explore other materials or implantation conditions.
1：Experimental Design and Method Selection:
Channeled-ion implantation (CII) and non-channeled ion implantation using an ion energy in the Bethe–Bloch region (IIBB) were compared.
2：Sample Selection and Data Sources:
High-purity semi-insulating 4H-SiC (0001) wafer and n-type 4H-SiC (0001) wafer were used.
3：List of Experimental Equipment and Materials:
Parallel-scanning system (PSS) for CII and MeV implanter for IIBB.
4：Experimental Procedures and Operational Workflow:
CII was carried out at E0 of 300?900 keV, and non-channeled-ion implantation was performed at E0 up to 26 MeV.
5：Data Analysis Methods:
Al concentration-depth profiles were measured and compared.
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