研究目的
Investigating the formation of an ohmic contact by laser annealing to fabricate Junction Barrier Schottky (JBS) diodes on thinned 4H-SiC substrates.
研究成果
Laser annealing simulations demonstrated the significant impact of metallisation and its thickness on the temperature at the interface with 4H-SiC, influencing phase formation and ohmicity. Optimization of metal piling can achieve temperatures necessary for ohmic transition, with future experiments planned.
研究不足
The study is based on simulations, and actual experimental validation is pending. The impact of laser annealing on the electrical properties of the Schottky contact needs further investigation.
1：Experimental Design and Method Selection:
Finite elements method was used to solve the heat equation for thermal simulations of laser annealing.
2：Sample Selection and Data Sources:
Several metallisations (aluminum Al, gold Au, molybdenum Mo, nickel Ni, titanium Ti, tungsten W) deposited on 4H-SiC were simulated.
3：List of Experimental Equipment and Materials:
Sentaurus Process TCAD by Synopsys was used for simulations.
4：Experimental Procedures and Operational Workflow:
Simulations were conducted under UV laser irradiation with varying fluences and metal thicknesses.
5：Data Analysis Methods:
Temperature at the metal/4H-SiC interface was estimated to determine the best conditions for ohmic contact formation.
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