研究目的
Comparing the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar) for photovoltaic applications.
研究成果
The study concludes that for ion-implanted n-type regions in silicon solar cells, both As and P offer the same high quality electrical behavior, with the only difference being the higher sheet resistance of the arsenic-implanted regions. For p-type regions, substituting elemental boron by fluorine containing species is more challenging, resulting in higher saturation current densities and sheet resistance. The study also highlights the sensitivity of p-type species to changes in implant parameters and the occurrence of a buried amorphous layer after ion implantation of BF2.
研究不足
The study is limited to the comparison of electrical behavior of different dopant species on specific solar-relevant surfaces. The impact of fluorine on the electrical properties of ion-implanted p-type layers is of great interest but requires further investigation to fully understand its effects.
1：Experimental Design and Method Selection:
The study involves the preparation of symmetrical p+np+ and n+nn+ samples by double-sided ion implantation of elemental boron, boron-containing BF and BF2, elemental phosphorous and arsenic, respectively. Subsequent dopant activation and defect annealing is conducted in a conventional quartz furnace for 20 min at 1050 °C.
2：Sample Selection and Data Sources:
6 ?cm n-type Cz substrates (156 × 156 mm2 pseudo-square, 180 μm thick as-cut) are either saw damage-etched (SDE) or additionally textured.
3：List of Experimental Equipment and Materials:
VIISta HCS from Varian for ion implantation, E2000 from centrotherm for annealing, Sinton WCT-120 lifetime tester for measurements.
4：Experimental Procedures and Operational Workflow:
Samples are passivated on both sides by 15 nm Al2O3 for the p-type surfaces and by 80 nm SiNx for the n-type surfaces. Effective lifetimes, saturation current densities, and sheet resistances are measured by photoconductance decay method.
5：Data Analysis Methods:
The doping concentration after ion implantation and annealing is simulated using SENTAURUS Process. Theoretical J0 values are calculated considering only radiative and Auger recombination.
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