摘要： It is well known that the di?erent proportions of CuO and Cu2O in CuOx hole transfer materials have a great in°uence on the hole transport property as well as the device performances of perovskite solar cells (PSCs). In this paper, we changed the content of Cu2O in the ˉlm by controlling the deposition voltage during electrodeposition, and the e?ects of di?erent contents of Cu2O in the ˉlms on the device were investigated for the ˉrst time. It was found that the content of Cu2O in the ˉlm reached the highest point with the deposition voltage 0.5 V, such ˉlms have the highest transmittance and carrier mobility. After assembling the device, the power conversion e±ciency (PCE) of the champion device reached 13.48% under a one-sun AM 1.5 G (100 mW/ cm 2T illumination. Furthermore, the unpackaged device based on CuOx still retained over 75% PCE after being placed in the ambient condition (30–40% humidity, 20–30 (cid:1)CT for 500 h.