1：Experimental Design and Method Selection:

Physical Vapor Deposition (PVD) technique like RF magnetron sputtering was used to grow ultra-thin tungsten di sulfide (WS2) layers on top of soda lime glass substrates. Deposition power of radio frequency magnetron sputtering was varied (50W, 100 W, 150 W,200 W and 250 W).

2：Sample Selection and Data Sources:

Soda lime glass substrates of 7.5 cm × 2.5 cm × 0.2 cm were used for film deposition.

3：5 cm × 5 cm × 2 cm were used for film deposition. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: A 50 mm diameter WS2 (99.99%) sputtering target (Kurt. J. Lesker) was used as source material. BRUKER αXS-D8 Advance CuKα diffractometer, Carl Zeiss Merlin field emission scanning electron microscope (FESEM), Hall Effect measurement system, HMS ECOPIA

4：99%) sputtering target (Kurt. J. Lesker) was used as source material. BRUKER αXS-D8 Advance CuKα diffractometer, Carl Zeiss Merlin field emission scanning electron microscope (FESEM), Hall Effect measurement system, HMS ECOPIA Experimental Procedures and Operational Workflow:

3000. 4. Experimental Procedures and Operational Workflow: Substrates were pre-cleaned in ultrasonic bath by sequential cleaning process (mechanical scrubbing–acetone–methanol–deionized water) and dried with N2 gas flow. Initial purging of sputtering chamber and Pre-sputtering were carried out for 15 min with 50 W power to remove unwanted components from the chamber. Deposition chamber base pressure was brought down to 10?4 Pa by turbo-molecular pump and the working pressure during all the deposition run was maintained at 1.5 Pa by flowing 4 sccm of purified Ar (99.99%) as the working gas into the chamber.

5：5 Pa by flowing 4 sccm of purified Ar (99%) as the working gas into the chamber. Data Analysis Methods:

5. Data Analysis Methods: XRD patterns were recorded in the 2? range from 10? to 80? with a step size of 0.05? using Cu Kα radiation wavelength, λ= 1.5408?A. The mean crystallite sizes (D) of the films was calculated using Scherrer formula. Atomic force microscopy (AFM) was used to study a variety of surface effects present in embossed structures. Opto-electrical properties such as carrier concentration, mobility, and resistivity were measured by Hall Effect measurement system.