研究目的
To investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance on silicon material using KrF excimer laser micromachining.
研究成果
The study demonstrated that both the number of laser pulses and passes affect the etch rate on silicon, with the number of passes showing a steeper decline in etch rate. This suggests that the number of laser pulses has a more significant impact on etch rate than the number of passes. Future work will focus on optimizing etching performance to reduce time and cost.
研究不足
The study was limited to silicon material and specific laser parameters (fluence, frequency, and velocity). The effects of other materials and varying additional parameters were not explored.
1：Experimental Design and Method Selection:
The study used a KrF excimer laser micromachining station (RapidX250 from Resonetics Inc.) with a laser generator (ATLEX-500-SI) to investigate the etch performance on silicon. Parameters such as frequency, fluence, and velocity were kept constant while varying the number of laser pulses and passes.
2：Sample Selection and Data Sources:
Silicon was selected as the sample material due to its recognition in MEMS and microelectronics.
3：List of Experimental Equipment and Materials:
RapidX250 excimer machining station, ATLEX-500-SI excimer laser generator, KrF gas mixture, AutoCAD for design, and BobCAD for code conversion.
4：Experimental Procedures and Operational Workflow:
The laser beam was directed through a series of optical components to the silicon sample, with the number of pulses and passes varied to observe their effects on etch rate.
5：Data Analysis Methods:
The etch rate was calculated as etched depth divided by the number of laser pulses, with results analyzed to understand the relationship between laser parameters and etch performance.
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