研究目的
Investigating the design and fabrication of a hybrid metal–semiconductor Distributed Bragg Reflector (DBR) for optically pumped surface-emitting laser (VCSEL) to decrease series resistance and improve output power.
研究成果
The fabricated high-power VCSEL chip with a hybrid metal/DBR reflector demonstrates reduced series resistance and increased output power, achieving a maximum output power of 40.2mW. The design optimizations contribute to the high performance, suggesting potential for further advancements in VCSEL technology.
研究不足
The study focuses on optically pumped VCSELs, and the applicability to electrically pumped VCSELs may require further investigation. The thermal effects and mode competition at higher currents also present challenges for further power scaling.
1：Experimental Design and Method Selection:
The study proposes a hybrid metal/DBR reflector for VCSELs to reduce series resistance and increase output power. The design involves reducing the number of DBR pairs in the non-emitting mirror to 21.5 and incorporating a metal mirror.
2：5 and incorporating a metal mirror.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The epitaxial structure was grown on a GaAs substrate by metal-organic chemical vapor deposition (MOCVD), with the active region consisting of three pairs of Al0.3Ga0.7As /Al0.06Ga0.94As quantum wells (QWs).
3：3Ga7As /Al06Ga94As quantum wells (QWs).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes MOCVD for epitaxial growth, lithography tools for patterning, and evaporation process for metal deposition. Materials include GaAs substrate, Ti and Au for metal mirror, and AlGaAs for DBR layers.
4：Experimental Procedures and Operational Workflow:
The process involves depositing Ti and Au to form a metal mirror, using lithography to pattern the VCSEL chip, and measuring the output power through the photo-response current of an integrated PIN-PD.
5：Data Analysis Methods:
The output power of VCSEL under continuous-wave operation is calculated by measuring the photo-response current of PIN-PD, with leakage current excluded from calculations.
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