研究目的
Investigating the luminescence, linear and laser induced optical traits of potassium aluminium sulphate crystal for photonic device applications.
研究成果
The KAS crystal exhibits high optical transmittance, distinct photoluminescence, and significant third-order nonlinear optical properties, making it a promising candidate for various photonic device applications. Its high laser damage threshold further enhances its suitability for high-power laser applications.
研究不足
The study focuses on the optical and laser-induced properties of KAS crystal but does not explore its mechanical or thermal properties which could be vital for certain photonic device applications.
1:Experimental Design and Method Selection:
The bulk size single crystal of potassium aluminium sulphate (KAS) was grown by slow solvent evaporation technique. The crystalline phase was determined by powder X-ray diffraction analysis and structural parameters by single crystal XRD technique. Optical transparency was examined within the wavelength range of 200-900 nm using UV-visible spectral analysis. The luminescence behavior was investigated within the visible range. The laser damage threshold was determined using a pulse mode operated 1064 nm Nd:YAG laser. The third order nonlinear optical (TONLO) properties were examined at 640 nm.
2:Sample Selection and Data Sources:
The KAS crystal was grown from potassium aluminium sulphate dodecahydrate salt dissolved in double distilled water.
3:List of Experimental Equipment and Materials:
Bruker Advanced D8 powder X-ray diffractometer, Enraf Nonius CAD4 single crystal X-ray diffractometer, Shimadzu UV-2450 spectrophotometer, Hitachi F-7000 FL spectrophotometer, Litron Nd:YAG laser.
4:Experimental Procedures and Operational Workflow:
The saturated solution of KAS was prepared, filtered, and housed in a constant temperature water bath for crystal growth. The grown crystal was subjected to various characterization techniques.
5:Data Analysis Methods:
The optical transmittance, luminescence behavior, laser damage threshold, and TONLO properties were analyzed using respective equipment and techniques.
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