研究目的
Investigating the growth and characterization of GaN thin films using Laser Molecular Beam Epitaxy (LMBE) technique for the realization of GaN p-n junction.
研究成果
GaN films with good structural and optical quality have been successfully realized using LMBE technique. The electrical analysis of the p-n junction revealed rectifying diode like behaviour with a low knee voltage, highlighting the promising prospects of employing LMBE technique for the realization of GaN based photonic devices.
研究不足
The interfacial trap states may alter the electrical characteristics of p-n junctions, leading to moderate rectification.
1：Experimental Design and Method Selection:
The study employed Laser Molecular Beam Epitaxy (LMBE) technique for the growth of GaN thin films at moderate growth temperatures in N2 gas ambience.
2：Sample Selection and Data Sources:
High purity polycrystalline Gallium Nitride target and c-plane sapphire substrates were used.
3：List of Experimental Equipment and Materials:
An ultra-high vacuum deposition chamber, Coherent Make KrF excimer laser, SVT Associates make RF Cell, and Keithley 4200 Semiconductor Characterization system were used.
4：Experimental Procedures and Operational Workflow:
The deposition involved ablating the target material in ultra-high vacuum conditions with high power laser pulses in reactive N2 gas ambience.
5：Data Analysis Methods:
Structural properties were analyzed using X-ray diffraction, optical properties using UV-visible spectroscopy, and electrical properties using I-V measurements.
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