研究目的
Investigating the polarizability of germanium quantum dots with spatially separated electrons and holes in Ge/Si heterostructures under the action of low-intensity light.
研究成果
The research demonstrates that germanium quantum dots in Ge/Si heterostructures exhibit significantly higher values of oscillator strengths, transition dipole moments, and polarizability under low-intensity light compared to typical semiconductors. This suggests potential applications in optoelectronics, particularly in the infrared spectral region.
研究不足
The study does not account for the exciton–phonon interaction, which could affect the kinetic energy spectrum and the lifetime of the exciton. Additionally, the theoretical model may not fully capture all experimental conditions and variations in quantum dot sizes and shapes.
