研究目的
To analyze the characteristics of plasma silicon diluted with hydrogen and argon for photovoltaic application.
研究成果
The numerical modeling demonstrates that the gas mixture used covers a large energy range, leading to a high deposition rate. The use of a CCP reactor with RF excitation at low pressure and temperature results in uniform deposition without surface deterioration.
研究不足
The study is limited to numerical modeling and does not include experimental validation. The assumptions include weakly ionized gas, low pressure, no applied magnetic field, Maxwellian energy distribution function for electrons, and satisfaction of Einstein's relation by mobility and diffusion coefficient.
