研究目的
Investigating the development and performance of a nonvolatile OFET photoelectric memory using CsPbBr3 quantum dots embedded in PMMA as a charge trapping layer.
研究成果
The nonvolatile photoelectric memory with CsPbBr3 QDs embedded in PMMA as a charge trapping layer shows great potential for future photoelectric devices due to its well storage characteristics, fast programming/erasing speed, and good retention and endurance performance.
研究不足
The study mentions that the problem of reduced memory window after exposure to air for two weeks may be solved with future encapsulation processing, indicating a limitation in the current device's air stability.
1：Experimental Design and Method Selection:
The study involves the synthesis of CsPbBr3 QDs by hot-injection method and their embedding in PMMA to form a charge trapping layer. The memory device is fabricated with a bottom gate top contact structure using n-type Si as the gate electrode, SiO2 as the gate insulator, and pentacene as the semiconductor layer.
2：Sample Selection and Data Sources:
CsPbBr3 QDs are synthesized and mixed with PMMA in different mass ratios. The devices are fabricated on heavily doped n-type Si wafers with 200 nm thick SiO
3：List of Experimental Equipment and Materials:
Equipment includes a Zolix-λ300 spectrometer for UV-Vis absorption and PL spectra, TEM (jem-2100f) for QDs characterization, SEM (NanoSEM 430) for cross-sectional imaging, AFM (CSPM5500) for surface morphology, and KeithleyTM 2400 for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The QDs/PMMA mixture is spun-coated onto substrates, annealed, and then pentacene and gold electrodes are deposited. The memory characteristics are measured under various programming and erasing operations.
5：Data Analysis Methods:
The threshold voltage shifts and memory windows are analyzed to evaluate the memory performance.
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