研究目的
Investigating the anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations of incident light.
研究成果
The anomaly in the photovoltaic characteristics of multijunction solar cells at ultrahigh concentrations of incident light is due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells, which absorbs photons and creates a counter photovoltage.
研究不足
The study focuses on the anomaly observed at ultrahigh concentrations of incident light, and the findings are specific to the design of the multijunction solar cells studied.
1：Experimental Design and Method Selection:
The study involved analyzing the light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current.
2：Sample Selection and Data Sources:
Double-junction GaInP/GaAs SC and triple-junction GaInP/GaAs/Ge SC were chosen for study.
3：List of Experimental Equipment and Materials:
A source based of a pulsed Xenon lamp was used for irradiation.
4：Experimental Procedures and Operational Workflow:
Light I–V characteristics were obtained upon irradiation from the Xenon lamp at various concentrations of incident light up to ultrahigh concentrations.
5：Data Analysis Methods:
The dependence of the open-circuit voltage on photogenerated current was analyzed, and the results were compared with calculated dependencies taking into account the heating of the SC by the incident light.
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