研究目的
Investigating the contact resistivity of p-type passivating contacts for silicon solar cells compatible with firing, a rapid annealing process.
研究成果
The study demonstrates that p-type passivating contacts for silicon solar cells can achieve low contact resistivities and high implied open-circuit voltages when processed under optimal firing conditions. The contact resistivity is influenced by a combination of tunneling through the interfacial oxide and thermionic field emission over the Schottky barrier to the metallization. The findings suggest that these contacts are suitable for high-efficiency silicon solar cells, with potential for application in large-scale manufacturing.
研究不足
The study is limited by the rapid thermal annealing process's short duration and the specific conditions of the firing process, which may not fully optimize dopant activation and oxide passivation. The method for characterizing carrier density and mobility is not applicable to wafers with deeper textures.
1：Experimental Design and Method Selection:
The study involves the characterization of contact resistivity and passivation properties of p-type passivating contacts for silicon solar cells, focusing on the effects of firing (rapid thermal annealing).
2：Sample Selection and Data Sources:
Boron-doped float zone wafers with a thickness of 200 μm and a resistivity of 2 Ω·cm were used. The wafers were cleaned and covered with a thin oxide layer, followed by the deposition of p-type SiCx:B layers.
3：List of Experimental Equipment and Materials:
Equipment includes a UVO cleaner (Jelight, UVO cleaner42), plasma-enhanced chemical vapor deposition (PECVD) system, rapid thermal processing (RTP) system (Jetfirst 200, Jilpelec), ellipsometry (UVISEL, Horiba Jobin Yvon), UV-Vis spectrometry (Lambda 950, Perkin Elmer), and IR transmission (Vertex 90 FTIR, Bruker).
4：Experimental Procedures and Operational Workflow:
The samples underwent cleaning, oxide layer formation, SiCx:B layer deposition, firing, hydrogenation, and characterization steps including optical characterization and contact resistivity measurement by the transfer length method (TLM).
5：Data Analysis Methods:
The data were analyzed using modeling software (DeltaPsi, Horiba Jobin Yvon) for optical properties and the TLM method for contact resistivity, with corrections for current spreading.
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