研究目的
Investigating the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells and the influence of the growth per cycle (GPC), the S/(S+O) ratio, and the glass temperature on the efficiency of the solar cells.
研究成果
The study successfully deposited Zn(O,S) thin films using ALD for high-efficiency CIGSSe solar cells. The optimal conditions were found to be a substrate temperature of 120°C, S/Zn ratio of 0.7, and thickness of around 30 nm, achieving an efficiency of 17.1%. The ALD method allows for precise control over film thickness and composition, making it suitable for mass production.
研究不足
The study was limited to substrates with an aperture area of 0.4 cm2 and specific ALD process conditions. The efficiency started to decrease when the thickness of the Zn(O,S) layer exceeded a certain threshold.
1：Experimental Design and Method Selection:
The study used atomic layer deposition (ALD) to deposit Zn(O,S) buffer layers on CIGSSe solar cells. The ALD process allowed for precise control over film thickness and composition.
2：Sample Selection and Data Sources:
CIGSSe absorber and CdS buffer layers were provided by STION in the USA. The devices had the structure SLG/Mo/CIGSSe/buffer/ZnO:B.
3：List of Experimental Equipment and Materials:
A low-pressure MOCVD system for ZnO:B window layers, ALD for Zn(O,S) buffer layers, and a solar simulator (McScience, Xe55) for performance investigation.
4：Experimental Procedures and Operational Workflow:
Prior to deposition, the absorber film was etched in a 10 wt% KCN solution. The ALD cycle consisted of DEZn pulse, purge, H2S/H2O pulse, and purge. The composition and thickness were controlled by the pulsing sequence and the number of cycles.
5：Data Analysis Methods:
The performance of the solar cells was investigated using a solar simulator at AM 1.5G illumination. The bandgap energy was analyzed using the optical properties of the deposited Zn(O,S) thin-films.
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