研究目的
To investigate the influence of periodic ultra-thin AlN interlayers in the multiplication region on the GaN avalanche photodiode (APD) to achieve a high gain at constant voltage mode.
研究成果
The periodic ultra-thin AlN interlayers in the multiplication region of GaN APD significantly influence the transport process of photo-generated electrons, leading to three different multiplication stages with increasing reverse voltage. A high gain of 6×104 at constant voltage mode (36V) was achieved, validating the numerical simulations.
研究不足
The study focuses on the influence of AlN interlayers on the multiplication process but does not explore the upper limit of the gain under constant voltage mode in detail.
