研究目的
Investigating the growth and characterization of type-II InAs/GaSb superlattices interband cascade infrared detectors (IB CIDs) on highly lattice-mismatched (001) GaAs substrates for mid-wave range.
研究成果
IB CIDs were successfully grown on GaAs substrates and characterized. The devices exhibit relatively high responsivity in MWIR range but the dark current is dominated by the leakage current. Future work includes technology refinement, optimization of the growth, proper passivation of the device, and fabrication of immersion lens for improved detectivity.
研究不足
The performance of the devices is limited by leakage current. The room temperature value of peak detectivity is more than two times lower compared to devices grown on GaSb substrates. The devices were not passivated and grown on highly-mismatched GaAs substrate.
1：Experimental Design and Method Selection:
The IB CIDs were grown on GaAs (001) substrates in a RIBER Compact 21-DZ molecular beam epitaxy (MBE) system. The structure includes a GaSb interfacial misfit array (IMF) buffer layer and the IB CID composed of 1, 3, or 7 stages.
2：Sample Selection and Data Sources:
The substrates were
3：35 mm thick GaAs (001). List of Experimental Equipment and Materials:
RIBER Compact 21-DZ MBE system, PANalytical X’Pert Pro MRD diffractometer for HRXRD.
4：Experimental Procedures and Operational Workflow:
Substrates were deoxidized and degassed, followed by the deposition of a GaAs layer and the GaSb IMF buffer layer. The IB CID structure was then deposited.
5：Data Analysis Methods:
HRXRD technique was used to determine structural properties of deposited SLs. I-V curves and spectral response were measured at several temperatures.
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