研究目的
To develop a non-destructive operando observation method for elucidating the changes in the physical properties of electronic devices, specifically the resistive switching in a resistive random-access memory (ReRAM).
研究成果
The Laser-PEEM with a pulse–voltage application system enables clear visualization of chemical state changes in ReRAM devices under operation, providing insights into the resistance change mechanism. The technique's deep probing depth and high spatial resolution make it suitable for observing various electronic devices in real time.
研究不足
The study's limitations include the need for precise timing between voltage application and image acquisition to avoid distortion in PEEM images and the sensitivity of Laser-PEEM observation to surface contamination and roughness.
1：Experimental Design and Method Selection:
The study utilized a laser-excited photoemission electron microscope (Laser-PEEM) for operando observation of ReRAM devices.
2：Sample Selection and Data Sources:
Cross-bar ReRAM samples with different top electrode (TE) thicknesses were prepared to estimate the probing depth.
3：List of Experimental Equipment and Materials:
The setup included a Laser-PEEM, ReRAM devices with Pt/Ta2O5/TiN stacking structure, and a source measure unit (SMU) for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The operando observation involved applying pulse voltages to the ReRAM device while simultaneously acquiring PEEM images and resistance values.
5：Data Analysis Methods:
The probing depth was estimated from the TE thickness dependence of the TiN-BE signal intensity, and differential PEEM images were created to visualize resistance changes.
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