研究目的
Investigation of Si3N4 waveguides for on-chip gas sensing by optical absorption within the mid-infrared region between 2.7 and 3.4 μm.
研究成果
The 1.6-μm-high and 1.5-μm-wide Si3N4 waveguide is identified as suitable for single mode operation in both quasi-TE and quasi-TM polarizations, achieving competitive performance for on-chip spectroscopic sensing between 2.7 and 3.4 μm. The detection limit could be decreased down to a few ppm or sub-ppm depending on operating conditions.
研究不足
The study is theoretical and does not include experimental validation. Practical fabrication of more than 1-μm-thick low-stress Si3N4 waveguide is an on-going research.
1：Experimental Design and Method Selection:
Theoretical investigation using Finite Difference Eigenmode (FDE) simulation to analyze the use of Si3N4 on SiO2 waveguide for multi-gas wideband on-chip spectroscopic sensing.
2：Sample Selection and Data Sources:
Analysis focused on the spectral ranges between 2.7 and 3.4 μm, which contain absorption peaks of H2O, CO2, N2O, NH3, C2H4, and CH
3：7 and 4 μm, which contain absorption peaks of H2O, CO2, N2O, NH3, C2H4, and CHList of Experimental Equipment and Materials:
4.
3. List of Experimental Equipment and Materials: Si3N4 on SiO2 waveguide, FDE simulation tool (Lumerical Inc.).
4：Experimental Procedures and Operational Workflow:
Simulation of waveguide properties including single-mode condition, bending loss, and power fraction residing in the air cladding.
5：Data Analysis Methods:
Analysis of detection resolution based on waveguide length, optical loss, and fabrication variations.
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