研究目的
Investigating the I-V hysteresis of tin perovskite solar cells using capacitance-voltage (C-V) measurement coupled with charge modulation spectroscopy (CMS) to understand the carrier behaviors in tin perovskite solar cells.
研究成果
The study revealed that the I-V hysteresis in tin perovskite solar cells is primarily due to carrier injection into the MASnI3 layer. This finding provides a method for evaluating carrier motion in such cells, contributing to the development of lead-free perovskite solar cells.
研究不足
The study focuses on the carrier injection process in tin perovskite solar cells under dark conditions at room temperature, which may not fully represent the operational conditions under sunlight.
1：Experimental Design and Method Selection:
The study employed C-V measurement and CMS to investigate the I-V hysteresis of tin perovskite solar cells.
2：Sample Selection and Data Sources:
Tin perovskite solar cells with a structure of ITO/PEDOT:PSS/MASnI3/C60/Al were prepared.
3：List of Experimental Equipment and Materials:
Instruments used include a source meter (Keithley 2400), an impedance analyzer (Solartron SI 1260), and a spectrometer (Andor Technology: SR-163) equipped with a cooled charge-coupled device (CCD) image sensor (Andor Technology: DU-920P-BV).
4：Experimental Procedures and Operational Workflow:
The I-V measurement was conducted with a scan speed of
5：08 V/s. C-f and C-V characteristics were measured by applying small AC signals of 100 mV. CMS measurement involved focusing a white light onto the device and analyzing the reflected light spectrum. Data Analysis Methods:
The relative change in the reflection spectrum was analyzed to evaluate carrier behaviors.
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