研究目的
Improving the photovoltaic properties of Cu2O-based heterojunction solar cells using an n-type layer composed of thin films in a binary oxide semiconductor prepared by a low-damage deposition method.
研究成果
The highest efficiency of 3.22% was achieved in an AZO/n-ZnO thin film/p-Cu2O sheet heterojunction solar cell, which exceeded the characteristics of an AZO/p-Cu2O sheet Schottky-type solar cell. The new r.f. superimposed d.c. magnetron sputtering method is a promising approach for producing Cu2O-based solar cells.
研究不足
The study acknowledges the challenges of PLD methods, including low deposition rates and complications arising from deposition over large areas, and the need to optimize the ratio of high-frequency power to direct current power to suppress oxygen ion particles incident on the p-Cu2O sheet surface.
1：Experimental Design and Method Selection:
The study used a low-damage deposition method applying a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering to prepare the n-type layer.
2：Sample Selection and Data Sources:
Copper sheets were oxidized to form Cu2O sheets, which were then impregnated with NaCl powder and heat-treated to incorporate Na into them.
3：List of Experimental Equipment and Materials:
A multi-chamber MSD apparatus was used to deposit non-doped ZnO thin film and transparent-conducting AZO thin films onto p-Cu2O sheets.
4：Experimental Procedures and Operational Workflow:
The deposition conditions included RT, 10–40 mm distance between target and substrate, non-doped ZnO powder as target for n-type layer, and sintered AZO as target for transparent electrode.
5：Data Analysis Methods:
The photovoltaic properties of the solar cells were evaluated by exposing only the AZO transparent electrode area to AM1.5G solar illumination.
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