摘要： The recycling acquisition of silicon waste from photovoltaic industry has gained an increasing attention nowadays, since more than 50% of high purity material ends up as kerf during the wafer cutting process. Currently, different Si-based applications are being exploited in terms of using such Si kerf, in order to lower cost and significantly increase environmental impact. Thermoelectric devices can efficiently contribute towards this recycling approach, via the preparation of highly efficient silicides for power generation. In this work, Bi doped Mg2(Si,Sn,Ge) materials were prepared using Si-kerf originated from photovoltaic (PV) cutting wastes. Different Bi concentrations were studied in terms of thermoelectric properties and performance and a high figure-of-merit of 1.1. was achieved at 800K. In addition, a thorough structural and mechanical property characterization, such as morphology, phase identification, hardness and indentation modulus has been conducted. These results, which were evaluated and compared to materials prepared with pure Si (>99.9%), are presented for the first time for Mg2(Si,Sn,Ge) materials.