1：Experimental Design and Method Selection:

The In2S3 thin films were prepared by co-evaporation technique with various thicknesses in the range 130–700 nm at a constant substrate temperature of 350 ?C. The structural, morphological, compositional, optical and electrical properties of In2S3 thin films were studied as a function of thickness.

2：Sample Selection and Data Sources:

The films were deposited on soda-lime glass substrates. The thickness of the films was measured using SQM 160 quartz crystal thickness monitor.

3：List of Experimental Equipment and Materials:

Thermal evaporation unit, molybdenum boat, glass crucible, tungsten wire basket, PID controller, RIGAKU smartlab GI-XRD, HORIBA JOBINYVON LabRAM HR800 system, BRUKER Dimension Icon Atomic Force Microscopy (AFM), ZEISS Ultra55 GEMINI Field Emission Scanning Electron Microscope (FESEM), Oxford instruments EDAX system, Kratos Axis Ultra DLD system, ECOPIA HMS-5000 Hall effect measurement system, JASCO V-670 UV–vis-NIR spectrometer, Source Measure Unit (Keysight B2901A).

4：Experimental Procedures and Operational Workflow:

The films were deposited by co-evaporation of Indium rod and Sulphur powder. The photodetectors were fabricated using Al interdigitated electrodes deposited by thermal evaporation method.

5：Data Analysis Methods:

The structural properties were analyzed using XRD and Raman spectroscopy. The morphological properties were studied using AFM and FESEM. The compositional analysis was performed using XPS and EDS. The optical properties were measured using UV–vis-NIR spectrometer. The electrical properties were recorded using Hall effect measurement system.