研究目的
Investigating the feasibility of continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror on the bottom side formed of {20?21}-plane GaN.
研究成果
The study successfully demonstrated room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror on {20?21} semi-polar GaN. The emission wavelength and the threshold current were 515 nm and 1.8 mA, respectively. Combining the device with existing blue and red devices enables full color light sources.
研究不足
The wall plug efficiency (WPE) was less than 0.1%. The emission wavelength is affected by inconsistencies in QD quality and instabilities in controlling the cavity length.
1：Experimental Design and Method Selection:
The study investigates the feasibility of CW operation of green VCSELs with a curved mirror on the bottom side formed of {20?21}-plane GaN.
2：Sample Selection and Data Sources:
MOCVD was used to grow four quantum wells (InGaN/GaN MQWs), a p-GaN layer doped with Mg, and a contact layer doped with Mg on a (20?21) GaN substrate.
3：List of Experimental Equipment and Materials:
A 30-nm-thick ITO layer and a p-side DBR with
4：5 Ta2O5/SiO2 bilayers were deposited on the contact layer. An n-side DBR with 14 Ta2O5/SiO2 bilayers was deposited to form the curved mirrors. Experimental Procedures and Operational Workflow:
The wafer was lapped to a thickness of about 20 μm. Resin disks were photolithographed on the lapped face of the GaN wafer, melted into droplets, and transferred onto the GaN substrate by reactive ion etching.
5：Data Analysis Methods:
The device characteristics and behavior were measured under CW current injection at room temperature.
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Spectrophotometer
Hitachi U-4000
Hitachi
Used to measure the reflectivity spectra of the DBRs.
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Power meter
ADCMT 6240
ADCMT
Used to measure the optical output of the device.
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Spectrometer
Yokogawa AQ6373
Yokogawa
Used to measure emission spectra.
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Optical fiber
Thorlabs M43L02 105 μm 0.22 NA
Thorlabs
Used to connect the spectrometer to the device.
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Polarizer
Thorlabs WP25M-VIS
Thorlabs
Used to observe the polarization.
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CCD
Coherent LASER CAM HR
Coherent
Used to observe the far-field pattern.
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Current source
ADCMT 8230E
ADCMT
Used to operate the device in a continuous wave mode.
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Atomic force microscopy
Bruker Dimension Icon
Bruker
Used to measure the roughness of the curved and plane surfaces formed on the GaN.
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MOCVD
Used to grow four quantum wells (InGaN/GaN MQWs), a p-GaN layer doped with Mg, and a contact layer doped with Mg on a (20?21) GaN substrate.
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ITO layer
30-nm-thick
Deposited on the contact layer.
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DBR
11.5 Ta2O5/SiO2 bilayers
Used as p-side DBR.
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DBR
14 Ta2O5/SiO2 bilayers
Used to form the curved mirrors.
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Reactive ion etching
Used to transfer the surficial shape of the resin droplets onto the GaN substrate.
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Microscope
Nikon LN150A
Nikon
Used to observe the near-field image.
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Peltier cooler
Asahi-data ALP-7033CAP
Asahi-data
Used to set the device on a socket at 25°C.
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