研究目的
Investigating the effect of Se and Cl segregation in polycrystalline CdSeTe photovoltaic devices to improve minority carrier lifetime and efficiency.
研究成果
Se and Cl co-doping significantly improves minority carrier lifetime in PV devices by passivating defect states in mid gap, as confirmed by 2P-TRPL and STEM/XEDS data. DFT calculations show that co-doping almost completely eliminates mid-gap states, suggesting a promising approach to enhancing device performance.
研究不足
The study focuses on the effects of Se and Cl segregation in polycrystalline CdSeTe devices, but the scalability and cost-effectiveness of the proposed methods for industrial applications are not discussed.
1：Experimental Design and Method Selection:
The study combined experimental and theoretical methods to analyze the effects of Se and Cl segregation along grain boundaries (GBs) in polycrystalline CdSeTe devices. High-angle annular dark field (HAADF) imaging and X-ray energy-dispersive spectroscopy (XEDS) were used for quantitative analysis of local composition and atomic structure. Two-photon time-resolved photoluminescence (2P-TRPL) measured carrier lifetime, and density functional theory (DFT) calculations provided information on local electronic structures.
2：Sample Selection and Data Sources:
Poly-crystalline CdSexTe1-x/CdTe thin films deposited on NSG TEC 10 soda lime glass coated with fluorine-doped tin oxide (FTO).
3：List of Experimental Equipment and Materials:
JEOL ARM200CF transmission electron microscope, X-MaxN 100 TLE XEDS silicon drift detector, FEI Helios Nanolab 600 dual-beam FIB/SEM system, Ti:Sapphire laser coupled to a confocal microscope.
4：Experimental Procedures and Operational Workflow:
Samples were prepared by FIB lift-out method. HAADF imaging and XEDS mappings were performed. TRPL measurements were conducted to assess carrier lifetime. DFT calculations were carried out using VASP.
5：Data Analysis Methods:
Bi-exponential fitting was applied to TRPL decay curves. XEDS line scans and mappings were analyzed for elemental distribution. DFT calculations analyzed density of states (DOS).
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