研究目的
Investigating the gas sensing properties of nitrogen-hyperdoped silicon (N-Si) for NOx detection, focusing on achieving a wide dynamic range from ultralow to ultrahigh concentrations.
研究成果
The microstructured and N-hyperdoped silicon exhibits distinctive sensing performance for NOx gas, achieving a wide dynamic range from ~0.011 to 4,000 ppm by combining two working principles. The sensor shows ultra-sensitivity to low concentrations and overcomes high concentration limitations through a photovoltaic self-powered mode under ALI.
研究不足
The sensor's dynamic range at high concentration is limited by an n–p conduction type transition. The study also notes the influence of ambient humidity and the need for optimization in sensor fabrication for consistent performance.
1：Experimental Design and Method Selection:
The study involves the preparation of N-Si by femtosecond laser irradiation in a NF3 atmosphere, followed by the fabrication of gas-sensing devices. The sensing properties are investigated under two modes: change of surface conductivity in the dark and change of self-powered photocurrent under asymmetric light illumination (ALI).
2：Sample Selection and Data Sources:
The N-Si is prepared on phosphorus lightly-doped monocrystalline Si (100) wafer. Gas sensing measurements are performed using a static volumetric system with NO2 calibration gas.
3：List of Experimental Equipment and Materials:
Includes a femtosecond-pulsed laser, NF3 gas, aluminum for electrodes, and a white-light LED for ALI.
4：Experimental Procedures and Operational Workflow:
The N-Si surface is irradiated to create microstructures, followed by cleaning and electrode fabrication. Gas sensing measurements are conducted in a controlled environment with and without light illumination.
5：Data Analysis Methods:
The gas response is defined as the relative change in resistance or current. Response and recovery times are measured, and calibration curves are fitted using an extended Langmuir adsorption isotherm equation.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
