研究目的
Investigating the fabrication of transferable high-quality CsPbBr3 single-crystals on highly oriented pyrolytic graphite (HOPG) substrate via weak-interaction heteroepitaxy for optoelectronic devices.
研究成果
The work demonstrates the fabrication of transferrable highly-quality CsPbBr3 MPSCs on HOPG substrate by the vdW epitaxy method, enabling the realization of microlaser and monolithic LED devices at room temperature. This lays the foundation for the development of advanced integrated photoelectronic devices based on inorganic halide perovskites.
研究不足
The method may not be applicable for non-lead perovskite due to poor chemical stability limiting the formation of perovskite.
1：Experimental Design and Method Selection
The CsPbBr3 MPSCs were fabricated by the chemical vapor deposition method. The commercial 10 mm × 10 mm HOPG substrate was placed inside the downstream of quartz tube. Precursor powder CsBr and PbBr2 is mixed uniformly at a ratio of 1:1 and placed at the position of the heat source. The reaction was performed at 575 ℃ for 15 min with the high-purity argon (99.99%) as transport gas.
2：Sample Selection and Data Sources
Commercial 10 mm × 10 mm HOPG substrate and precursor powder CsBr and PbBr2.
3：List of Experimental Equipment and Materials
Quartz tube, HOPG substrate, CsBr and PbBr2 powder, high-purity argon.
4：Experimental Procedures and Operational Workflow
The precursor powder was mixed and placed in the quartz tube with the HOPG substrate downstream. The reaction was carried out at 575 ℃ for 15 min under argon flow.
5：Data Analysis Methods
SEM, EDS mapping, XRD, PL measurements, time-resolved fluorescence decay curves, Raman spectra, AFM.
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