摘要： In this work, single-walled carbon nanotubes (SWCNTs) field electron emitters were fabricated by imprinting SWCNTs on substrates with a silver buffer layer. It was found that the field emission properties of imprinted SWCNTs were significantly improved with turn-on field at 0.62 V/um and threshold field at 1.04 V/um, comparing to screen-printed SWCNTs emitters who had turn-on field at 1 V/um and threshold field at 2 V/um. These improvements of SWCNTs emitters were owing to the directly imprinting method which made SWCNTs have clean surface and more emitters on the substrates. The lower turn-on electric field of field emission was attributed to no impurities encapsulate on the emitters and the large aspect ratio of SWCNTs resulting in high field enhancement factor of 15800. The emission performance of the imprinted cathode was almost unchanged after many times repeated experiments. This simple and low cost technique can fabricate high performance field emission cathodes efficiently and also demonstrates potential applications in many electronic devices.