研究目的
Developing a pulsed laser deposition technique to fabricate high-quality antimony selenosulfide thin films for efficient solar cells.
研究成果
The PLD method is efficient for fabricating Sb2(SxSe1(cid:2)x)3 thin films with tunable composition, leading to an optimal bandgap of ~1.45 eV and a high power conversion efficiency of 7.05% in solar cells.
研究不足
The high vapor pressure of sulfur and selenium may lead to incomplete transformation of selenium to Sb2(SxSe1(cid:2)x)3, affecting the film quality and device performance.
1：Experimental Design and Method Selection:
Pulsed laser deposition (PLD) technique was used to fabricate Sb2(SxSe1(cid:2)x)3 thin films with varying selenium/sulfur ratios.
2：Sample Selection and Data Sources:
Sb2S3 and Se mixed pellets were prepared as target materials.
3：List of Experimental Equipment and Materials:
PLD unit, vacuum chamber assembly, energetic pulsed laser, glass/FTO/CdS substrates.
4：Experimental Procedures and Operational Workflow:
Substrate temperature was controlled between 400–450°C for film deposition. Post-annealing at 390°C was applied.
5：Data Analysis Methods:
XRD for crystallinity, SEM for morphology, UV-vis absorption spectroscopy for optical properties, EDS for composition, J-V measurement for photovoltaic performance.
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