摘要： Single crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodection range (< 800 nm) and response time (> 10 μs) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodection range and shorter response time perovskite photodector by integrating the SC CH3NH3PbBr3 (MAPbBr3) perovskite on silicon (Si). The Si/MAPbBr3 heterojunction photodetector with an improved interface exhibits high performances including high speed, broad spectrum, and long-term stability. To our best knowledge, the measured detectable spectrum (405 nm-1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable with commercial germanium photodetectors. Moreover, the Si/MAPbBr3 device can maintain excellent photo-current performance up to 3 months. Furthermore, typical grey-scale face imaging is realized by scanning the Si/MAPbBr3 single-pixel photodetector. This work of ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.