研究目的
To summarize the growth strategies and electronic/optoelectronic applications of graphene-TMDs lateral heterostructures (HSs) and discuss technological advancements to achieve wafer-scale growth of continuous films for practical applications.
研究成果
The review concludes that patterned regrowth based on CVD systems allows spatially controlled lateral HSs of semiconducting TMDs and metallic graphene, facilitating various applications. However, challenges like non-epitaxial and overlapped heterojunctions exist. Future studies could focus on generating ballistic transistors with ultra-fast carrier transport and developing alternative materials to silicon technologies.
研究不足
The formation of chemical bonds between graphene and TMDs remains challenging. Non-epitaxial and overlapped heterojunctions are disadvantages of patterned regrowth methods. Polymer residues from transfer and lithographic processes complicate the investigation of heterojunctions.
1：Experimental Design and Method Selection:
The review discusses the use of chemical vapor deposition (CVD) methods for the growth of graphene-TMD lateral HSs, highlighting patterned regrowth and surface-mediated growth techniques.
2：Sample Selection and Data Sources:
The review synthesizes data from various studies on the growth and application of graphene-TMD lateral HSs, including optical images, TEM imaging, and diffraction patterns.
3：List of Experimental Equipment and Materials:
Equipment mentioned includes CVD systems, TEM, DF-TEM, LEEM, and optical microscopy. Materials include graphene, TMDs (MoS2, WSe2, WS2), and substrates like SiO2/Si and sapphire.
4：Experimental Procedures and Operational Workflow:
Detailed procedures for patterned regrowth and surface-mediated growth are described, including the transfer of graphene onto substrates, partial etching, and subsequent TMD growth.
5：Data Analysis Methods:
Analysis methods include TEM and LEEM imaging, diffraction pattern analysis, and electrical characterization of devices.
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