研究目的
To explore the electrical properties and photoresponse of the P-n heterojunction diode fabricated using p-type gallium nitride and layered molybdenum disulfide.
研究成果
The P-n heterojunction diode exhibits rectifying behavior with three orders of rectification and shows high optoelectronic performance upon illumination with a 405 nm laser. The diode acts as a self-powered photodetector, demonstrating the potential of the MoS2/GaN heterojunction in highly efficient photodetector applications.
研究不足
The study is limited by the understanding of the contacts and the current transport behavior in mixed-dimensional heterostructures. The ideality factor of the diode deviates from the ideal value, indicating the presence of interface states at the MoS2/GaN interface.
1：Experimental Design and Method Selection:
The study involves the fabrication of a P-n heterojunction diode using p-type gallium nitride (P-GaN) and layered molybdenum disulfide (MoS2). The electrical properties and photoresponse of the diode are characterized.
2：2). The electrical properties and photoresponse of the diode are characterized.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: P-GaN sample (1 μm thick) grown using metal–organic chemical vapor deposition on the sapphire substrate and MoS2 flakes exfoliated from the bulk crystal.
3：List of Experimental Equipment and Materials:
Electron beam lithography (EBL Model No: eLine plus Raith GmbH), field emission scanning electron microscope (FESEM Zeiss Microscope), thermal evaporation system, DC probe station (EverBeing-EB6), Keithley: SCS-4200 Semiconductor Characterization System.
4：Experimental Procedures and Operational Workflow:
The P-GaN sample was cleaned and Ohmic contacts were formed using Ni/Au. MoS2 flakes were exfoliated onto the P-GaN sample, and electrodes were patterned using EBL. Electrical and photoresponse measurements were performed at various temperatures.
5：Data Analysis Methods:
The current–voltage characteristics were analyzed to understand the conduction mechanism and photoresponse of the diode.
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