研究目的
Investigating the influence of two different methods of silicon doping in AlGaN layer on the optical and electrical performance of deep ultraviolet light-emitting diodes (DUV-LEDs).
研究成果
The Si-DD method provides better optical and electrical performance than the Si-MD method for DUV-LEDs, as evidenced by stronger PL and EL intensities, lower forward voltage and reverse leakage current, and higher capacitance-voltage characteristics. This suggests that the DD method could be advantageous in the fabrication of high-performance DUV-LEDs.
研究不足
The study focuses on the comparison between two Si-doping methods in n-AlGaN layers for DUV-LEDs, and the results may not be directly applicable to other doping methods or materials. The experimental conditions and material properties may also limit the generalizability of the findings.
1：Experimental Design and Method Selection:
The study compares two Si-doping methods in n-AlGaN layers for DUV-LEDs: modulation-doping (MD) and delta-doping (DD).
2：Sample Selection and Data Sources:
AlGaN-based DUV-LED structures are grown using metal organic chemical vapor deposition (MOCVD) system.
3：List of Experimental Equipment and Materials:
MOCVD system, sapphire substrates, AlN template, AlN/AlGaN super-lattices, n-Al
4：59Ga41N epi-layer, Al53Ga47N/Al36Ga64N multiple quantum wells (MQWs), p-Al65Ga35N cladding layer, p-GaN layer, Ti/Al/Ti/Au stack, Ni/Au stack. Experimental Procedures and Operational Workflow:
Growth of DUV-LED structures, fabrication of devices with different Si-doping methods, measurement of photoluminescence (PL) and electroluminescence (EL) intensities, current–voltage (I–V), capacitance–voltage (C–V) characteristics.
5：Data Analysis Methods:
Analysis of PL and EL intensities, I–V and C–V characteristics to evaluate optical and electrical performance.
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