研究目的
To design a novel 2 (cid:2) 4 matrix amplifier with a substrate integrated waveguide (SIW)-based power divider and combiner and a microstrip gain equalizer in the X and low Ku frequency bands for high gain and wide frequency band applications.
研究成果
The designed SIW-based matrix amplifier achieves a high gain of 16 dB with less than 4 dB ripple and more than 10 dB of input and output return losses in the 8–15 GHz frequency band. It represents a significant improvement over previous SIW amplifiers in terms of gain, bandwidth, and maximum achievable linear output power, making it suitable for microwave systems requiring high gain and wide bandwidth.
研究不足
The design is limited by the physical characteristics of the transistors, which determine the gain and the optimal number of stages (N) for the matrix amplifier. The achievable gain of microwave transistors falls as the frequency increases, necessitating the use of gain equalizers to achieve a flat gain over a wide frequency band.
