研究目的
To develop a harmless, controllable, and cost-effective method for doping/co-doping graphene to enhance its performance in photonic and electronic devices.
研究成果
The research successfully demonstrates a method for synthesizing tunably doped graphene films using GQDs as nucleation centers and dynamic CVD. The resulting graphene films show excellent performance in photodetectors, indicating potential applications in photonic and electronic devices. The method offers flexibility in experimental conditions and lays the foundation for industrial applications.
研究不足
The study does not explore the scalability of the synthesis method for industrial production. The doping saturation level and its impact on graphene's electronic properties are not fully investigated.
1:Experimental Design and Method Selection:
The study involves seeding 0D N & S dual-doped graphene quantum dots (GQDs) on a catalytic substrate followed by dynamic chemical vapor deposition (CVD) to synthesize monolayered dual-doped graphene films. The doping concentration is controlled by adjusting the spin-coat speed of GQDs.
2:Sample Selection and Data Sources:
A 99.8% pure copper foil is used as the catalytic substrate. The GQDs are synthesized hydrothermally from citric acid and thiourea.
3:8% pure copper foil is used as the catalytic substrate. The GQDs are synthesized hydrothermally from citric acid and thiourea. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a horizontal tube furnace for CVD, TEM (FET-Tecnai G2F20 S-7WIN), spherical aberration-corrected TEM (JEOL JEM-ARM 300F), STM, XPS (PHI 5802), and EELS (FEI Tecnai G2 F20). Materials include citric acid, thiourea, copper foil, and methane gas.
4:0). Materials include citric acid, thiourea, copper foil, and methane gas. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The process involves pretreatment of the copper foil, spin-coating of GQDs, annealing in a mixed atmosphere of Ar, H2, and CH4, and cooling to room temperature. The doped graphene is then transferred to substrates for characterization and device fabrication.
5:Data Analysis Methods:
Raman scattering, TEM, STM, XPS, and EELS are used to characterize the doped graphene. Photodetector performance is evaluated using an Agilent semiconductor parameter analyzer and a Keithley 4200 system.
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TEM
FET-Tecnai G2F20 S-7WIN
FEI
Characterization of graphene films and GQDs
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TEM
JEOL JEM-ARM 300F
JEOL
High-resolution imaging of graphene films
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EELS
FEI Tecnai G2 F20
FEI
Elemental analysis of graphene films
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Semiconductor Parameter Analyzer
B1500A
Agilent
Measurement of photoelectric parameters
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Semiconductor Characterization System
Keithley 4200
Keithley
Characterization of photodetector performance
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XPS
PHI 5802
Physical Electronics
Chemical composition analysis of graphene films
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