研究目的
Investigating the feasibility of the MPAT process on the as-cut c-Si wafers to reduce the size of textures, minimize c-Si etched losses, and keep robust property during cell fabrication.
研究成果
The MPAT process significantly reduces the texture size, processing time, and c-Si loss compared to the conventional process, making it suitable for low-cost and high-performance thin c-Si solar cells. High-quality surface passivation and low optical reflectivity were achieved, indicating the process's potential for improving solar cell efficiency.
研究不足
The study does not explore the long-term stability or scalability of the MPAT process for industrial applications. The effect of varying microparticle sizes or concentrations on the texturing process is not investigated.
1：Experimental Design and Method Selection:
The study compares the conventional alkaline texturing process with the MPAT process, which involves mixing glass microparticles with the alkaline solution.
2：Sample Selection and Data Sources:
n-type as-cut c-Si (100) wafers with a thickness ~120?170 μm and a saw-damaged layer (SDL) with a depth <6 μm were used.
3：List of Experimental Equipment and Materials:
SEM HITACHI S-4500 for observation, spectrometer UV-3150 by Shimadzu Corp for reflectivity measurements, and KOBELCO LTA-1510EP analyzer for minority carrier lifetimes.
4：Experimental Procedures and Operational Workflow:
The c-Si wafers were dipped into the texturing solutions for various etching times, and the texture size, optical reflectivity, and surface passivation quality were measured.
5：Data Analysis Methods:
The texture size was estimated from SEM images, and the optical and electrical properties were analyzed using the respective equipment.
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