研究目的
Investigating the design, growth, fabrication, and characterization of buried-tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs).
研究成果
The BTJ current injection may provide a viable solution for large-area membrane-type lasers with tight restrictions on layer thicknesses and doping. However, optimization of the doping and/or thickness of the lateral resistance layers is necessary to realize functional PCSELs.
研究不足
The high series resistance in BTJ-PCSEL devices, likely due to the substitution of the n-type InP substrate with the SOI–PC wafer, poses a limitation to the technology for large-area devices that requires high drive currents. The modest breakdown voltage in the blocking layer region surrounding the BTJ mesa is another concern.
1：Experimental Design and Method Selection:
The study involved the design and metal-organic vapor-phase epitaxial (MOVPE) growth of BTJ current injection structures for InP/Si hybrid nanomembrane PCSELs.
2：Sample Selection and Data Sources:
BTJ-light-emitting diodes (LEDs) on InP substrate and BTJ-PCSEL structures on photonic-crystal silicon-on-insulator (SOI) substrate were fabricated and characterized.
3：List of Experimental Equipment and Materials:
MOVPE growth was performed using an Aixtron 200/4 low-pressure horizontal reactor. Materials included trimethylindium (TMIn), trimethylgallium (TMGa), phosphine (PH3), and arsine (AsH3) precursors, among others.
4：Experimental Procedures and Operational Workflow:
The process included MOVPE growth, device fabrication involving selective etching and epitaxial regrowth, and characterization of the devices.
5：Data Analysis Methods:
The performance of the devices was evaluated through light-current-voltage (LIV) characteristics and electroluminescence imaging.
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