研究目的
To investigate the effects of Si substrate modification on the crystalline quality, optical, and electrical properties of BaSi2 thin-films for solar cell applications.
研究成果
The study confirms that BaSi2 thin-films evaporated on modified Si substrates are promising for thin-film solar cell applications, with optimized etching time of 8 s showing the best crystalline quality, optical properties, electrical properties, carrier lifetime, and photoresponsivity.
研究不足
The study is limited by the thickness of the BaSi2 film (170 nm), which affects the minority carrier lifetime. The crystalline quality of evaporated BaSi2 film needs further improvement to increase photoresponsivity.
1：Experimental Design and Method Selection:
The study employed a thermal evaporation method to grow BaSi2 thin-films on modified Si substrates. The surface modification of Si substrate was performed by a metal-assisted chemical etching method.
2：Sample Selection and Data Sources:
Three types of Si substrates were used for various characterizations.
3：List of Experimental Equipment and Materials:
SEM (JEOL JSM-7001-FA), Raman spectroscopy (Tokyo Instruments Nanofinder), XRD (Bruker Discover D8), spectrophotometer (JASCO Ubest V-570), and μ-PCD method (KOBELCO LTA-1512EP) were used.
4：Experimental Procedures and Operational Workflow:
The substrates were cleaned and modified before the BaSi2 film growth. The films were characterized for their crystalline quality, optical properties, electrical properties, carrier lifetime, and photoresponsivity.
5：Data Analysis Methods:
The crystalline quality was evaluated from the FWHM of A1 mode in Raman spectra. Optical properties were deduced from reflectance and transmittance spectra. Electrical properties were determined by Hall effect measurement.
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