研究目的
Investigating the use of indium tin oxide (ITO) in silicon electro-optic ring resonator modulators for optical communication systems.
研究成果
The proposed silicon ring resonator modulator utilizing ITO's epsilon-near-zero characteristics achieves an extinction ratio of about 14 dB and an insertion loss of 0.075 dB at a telecommunication wavelength of 1.55 microns. The design is compact, CMOS compatible, and offers high efficiency with low losses.
研究不足
The study is based on simulations, and practical implementation may face challenges related to fabrication tolerances and temperature fluctuations.
1：Experimental Design and Method Selection:
The study proposes a silicon electro-optic ring resonator modulator utilizing ITO's epsilon-near-zero characteristics. The design involves a slot waveguide as the access waveguide and a ring cavity with additional ITO and HfO2 layers.
2：Sample Selection and Data Sources:
The study uses simulations based on the Drude–Lorentz model to analyze the ITO's permittivity under applied gating voltage.
3：List of Experimental Equipment and Materials:
The design includes Si, SiO2, HfO2, and ITO layers with specific thicknesses and properties.
4：Experimental Procedures and Operational Workflow:
The study involves modal analysis, optimization of waveguide and ring cavity dimensions, and analysis of the device's performance in terms of extinction ratio and insertion loss.
5：Data Analysis Methods:
The performance is evaluated through simulations of the device's transmission spectra and modal response under different gating voltages.
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