研究目的
To develop an effective activation process for ZnTe:As back contacts in CdTe thin film solar cells to minimize Zn loss during CdCl2 deposition heat treatment, thereby improving solar cell efficiencies.
研究成果
The study demonstrated that a sacrificial CdS barrier layer can minimize Zn loss during the activation process of ZnTe:As back contacts in CdTe thin film solar cells, leading to a slight improvement in VOC. However, further optimization is needed to fully activate the back contact layer without significant Zn loss.
研究不足
Despite the use of the CdS barrier layer, there was still some Zn loss. Further optimization studies are required to establish the optimum processing conditions for full activation of the ZnTe:As back contact layer without inducing significant Zn losses.
1：Experimental Design and Method Selection:
The study assessed a thin layer of sacrificial CdS, deposited via MOCVD on ZnTe:As, to control the CHT step.
2：Sample Selection and Data Sources:
Reference single layers of ZnTe:As (~330 nm) with and without a CdS (<100 nm) cap layer were grown on uncoated borosilicate glass substrates using MOCVD.
3：List of Experimental Equipment and Materials:
MOCVD in a horizontal chamber, deionized (DI) water, 15% concentrated HCl acid, Au contact evaporation.
4：Experimental Procedures and Operational Workflow:
After growth, a CHT was performed in the same chamber, followed by rinsing off excess Cl with DI water. The CdS layer was subsequently removed by selective etching using HCl.
5：Data Analysis Methods:
Transmittance and Hall-effect measurements were performed to determine the optical and electrical properties of the reference single layers.
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