研究目的
To demonstrate coherent spin control of s-, p-, d-, and f-electrons in a silicon quantum dot and explore their potential as qubits in quantum computation.
研究成果
The research demonstrates that robust spin qubits can be implemented in multielectron quantum dots up to at least the third valence shell, offering higher control fidelities and faster qubit gates. The controllability of the excitation spectrum opens new avenues for exploring electron pairing and quantum computation.
研究不足
The study is limited by the complexity of many-body physics in multielectron quantum dots and the potential for disorder to degrade qubit reliability and performance. The utility of higher shell numbers (e.g., f-electrons) as qubits is also questioned due to increased relaxation hot spots.
1:Experimental Design and Method Selection:
The study involves the use of a silicon metal-oxide-semiconductor (Si-MOS) device to form a quantum dot under gate G1, with electron transitions mapped as a function of gate potentials. An integrated cobalt micromagnet is used for electrically-driven spin resonance (EDSR).
2:Sample Selection and Data Sources:
The quantum dot is occupied by up to 31 electrons, with specific focus on monovalent dot occupations (N = 1, 5, 13, and 25 electrons) as potential qubits.
3:List of Experimental Equipment and Materials:
A Si-MOS device with a cobalt micromagnet, gates for electron confinement and control, and a setup for measuring charge stability and spin dynamics.
4:Experimental Procedures and Operational Workflow:
The experiment involves initializing, controlling, and reading out spins using a pulse sequence, with EDSR used to drive Rabi oscillations. The impact of dot deformation on qubit performance is also investigated.
5:Data Analysis Methods:
Data analysis includes tracking addition energies, spin states via magnetospectroscopy, and coherence times to evaluate qubit performance.
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