研究目的
Investigating the feasibility of InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) as photonic frequency converters for future broadband optical and wireless communication systems.
研究成果
The feasibility of the InP-HEMT and G-FET as a photonic frequency double-mixing conversion device for future broadband optical and wireless communication systems was examined. A single G-FET as well as a single InP-HEMT can photomix the optical subcarriers to generate a LO and mix down the RF data on the 112.5 GHz carrier to the IF band simultaneously. Superior intrinsic RF performance of the G-FET was found throughout the experiment, although the extrinsic RF performance is yet to be improved.
研究不足
The measured responsivities of both InP-HEMT and G-FET are very low, by two to three orders of magnitude, compared with state-of-the-art MMW photomixers and/or photodiodes. The introduction of a photo-absorption layer will be feasible but is out of the scope of this study.
1：Experimental Design and Method Selection:
The study exploits optoelectronic properties and three-terminal functionalities of InP-HEMTs and G-FETs to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band.
2：Sample Selection and Data Sources:
High-quality bilayer epitaxial graphene was thermally grown on a C-face semi-insulating 4H-SiC(000–1) for G-FETs, and InP-based HEMTs were fabricated with InAlAs/InGaAs/InP material systems.
3：List of Experimental Equipment and Materials:
Equipment includes an optical frequency comb generator, UTC-PD photomixer module, F-band waveguide-type probe head, RF spectrum analyzer, and focusing lens for optical signal injection.
4：Experimental Procedures and Operational Workflow:
The photonic double-mixing conversion was conducted by mixing a 10 Gbit/s-class data signal on a
5：5 GHz carrier with an 5 GHz LO signal self-generated from an optically injected photomixed beat note. Data Analysis Methods:
1 The conversion gain and photoresponsivity were measured and analyzed to evaluate the performance of InP-HEMTs and G-FETs.
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