研究目的

Investigating the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and reporting the experimental results of Si MOSFET impedance in THz regime.

研究成果

The study demonstrates significant performance enhancement of Si MOSFET-based plasmonic THz detector with monolithic integrated antenna and provides experimental evidence of the impedance range of Si MOSFET in the THz regime. The findings suggest that MOSFET for plasmonic THz detectors should be designed considering both external impedance and internal plasmonics of the non-quasi-static channel electron density modulation.

研究不足

The study is limited to the investigation of Si MOSFET impedance in the THz regime and the performance enhancement of plasmonic THz detectors based on low-impedance MOSFET with monolithic integrated antenna. Potential areas for optimization include further reduction of noise-equivalent-power (NEP) and enhancement of responsivity.