摘要： We have investigated simultaneous effects of pressure, temperature, impurity location, Rashba and Dresselhaus spin–orbit interaction and magnetic field on THG of realized GaAs/Al0.5Ga0.5As pyramid quantum dot with considering the wet layer. For this purpose, we have calculated the energy levels and wave function of one electron that is confined in constant potential, in presence of impurity, magnetic field, Rashba and Dresselhous SOI in various temperatures, pressure and impurity location in effective mass approximation by FEM. In the following, we have presented the effect of magnetic field, Rashba and Dresselhous SOI, temperature, pressure and impurity location on THG in various conditions. Results show that: (1) THG increases by increasing the magnetic field and the distance between the peaks decrease. Also, the peak corresponding to the E21 transition has a blue shift and the peaks corresponding to the E31/2 and E41/3 transitions have a red shift. (2) THG decreases and shifts to higher energies and has a small blue shift by augment of temperature. (3) THG enhances and all of peaks have a red shift by increment of pressure. (4) THG has a minimum around z0 = 4 nm in all magnetic field, temperature and pressure cases. Also, all of peaks have a blue shift by augment of z0 until z0 = 4 nm and then have a red shit by increasing the z0.