研究目的
Investigating the formation of a p–n junction on a SiC thin film using laser-assisted doping combined with annealing technique for potential applications in power electronics and optoelectronics.
研究成果
The study successfully demonstrated the formation of a functional p–n junction on SiC thin films using laser-assisted doping. The technique showed potential for applications in power electronics and optoelectronics, with observed blue light electroluminescence and improved I–V characteristics under illumination.
研究不足
The study is limited by the polycrystalline nature of the SiC thin films and the need for high temperatures for certain doping processes. The technique's applicability to other substrates and materials was not explored.
1：Experimental Design and Method Selection:
Laser-assisted doping combined with annealing technique was used to form a p–n junction on a SiC thin film. The pulsed laser deposition (PLD) technique was employed for the growth of SiC thin films on a Si substrate.
2：Sample Selection and Data Sources:
SiC thin films were deposited on p-Si (1 0 0) and n-Si (1 0 0) substrates.
3：List of Experimental Equipment and Materials:
A Q-switched Nd3+ :YAG laser (355 nm) for PLD, an excimer laser (KrF, 248 nm) for laser-assisted doping, aluminum chloride (AlCl3) solution, and phosphoric acid (H3PO4) aqueous solution.
4：Experimental Procedures and Operational Workflow:
The PLD process was performed at a substrate temperature of 800 °C. Laser-assisted doping was performed in selective areas using AlCl3 and H3PO4 solutions.
5：Data Analysis Methods:
XRD, Raman spectroscopy, SIMS analysis, Hall effect measurements, and I–V characteristics were used to analyze the material and device characteristics.
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